Freescale 450 Watt RF Power Transistor Offers Unprecedented Peak Power for UHF Broadcast...

50 V LDMOS Device Designed to Enable Significant System-Level Power and Cost Savings for TV Transmitters

LAS VEGAS -- Freescale Semiconductor has introduced a 50 volt laterally diffused MOS (LDMOS) RF power transistor designed to deliver 50 percent higher output power than competing UHF

Demonstrating industry-leading RF figures of merit, the MRF6VP3450H device offers the highest output power in its class for UHF applications while enabling system-level power reductions that can potentially save broadcasters thousands of dollars in operating costs. The MRF6VP3450H delivers more than 450 W peak power at P1dB with 50 percent efficiency throughout the UHF broadcast frequency band.

The latest addition to Freescale's growing family of RF power LDMOS transistors for broadcast applications, the MRF6VP3450H is designed for TV transmitters employing both analog and digital modulation formats. Transmitters represent a significant operating cost for TV broadcasters, and a leading contributor to this operating cost is the power consumed by RF power amplifiers.

Highly efficient RF power transistors, such as the MRF6VP3450H, can help reduce this cost by converting a greater percentage of the required AC input power into RF output power. Ultimately, this efficiency reduces the energy usage required by the transmitter. In addition, individual transistors with higher RF power capability enhance system-level efficiency by minimizing device count and combining losses.

"As energy costs continue to soar, the ability to use highly efficient, cost-effective TV transmitters is critical to broadcasters," said Gavin P. Woods, vice president and general manager of Freescale's RF Division. "Transmitters designed with our new MRF6VP3450H device not only deliver dramatic annual energy savings, but also can significantly reduce transmitter cost by helping to minimize the number of required RF power transmitters."

The MRF6VP3450H device is designed to offer the best combination of power, efficiency and gain of any RF power transistor designed for 470 to 860 MHz TV broadcast operation. Using a DVB-T 64 QAM OFDM signal at 90 W average output power, the typical 860 MHz 50 V performance is 28 percent drain efficiency and 23 dB gain, with an adjacent channel power ratio (ACPR) at 4 MHz offset of -62 dBc in a 4 kHz bandwidth.